View STL36N55M5_7804007.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

this is information on a product in full production. january 2013 doc id 022602 rev 3 1/17 17 STL36N55M5 n-channel 550 v, 0.066 typ., 22.5 a mdmesh? v power mosfet in a powerflat? 8x8 hv package datasheet ? production data features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description this device is an n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order code v ds @ t jmax r ds(on) max i d STL36N55M5 600 v 0.090 22.5 a (1) 1. the value is rated according to r thj-case and limited by package. 3 3 3 ' $ 0ower&,!4?x(6 "ottomview !-v $ ' 3 table 1. device summary order code marking package packaging STL36N55M5 36n55m5 powerflat? 8x8 hv tape and reel www.st.com
contents STL36N55M5 2/17 doc id 022602 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STL36N55M5 electrical ratings doc id 022602 rev 3 3/17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 550 v v gs gate-source voltage 25 v i d (1) 1. the value is rated according to r thj-case and limited by package. . drain current (continuous) at t c = 25 c 22.5 a i d (1) drain current (continuous) at t c = 100 c 17 a i dm (1),(2) 2. pulse width limited by safe operating area. drain current (pulsed) 90 a i d (3) 3. when mounted on fr-4 board of inch2, 2oz cu. drain current (continuous) at t amb = 25 c 3.7 a i d (3) drain current (continuous) at t amb = 100 c 2.2 a p tot (3) total dissipation at t amb = 25 c 2.8 w p tot (1) total dissipation at t c = 25 c 150 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max ) 7a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 510 mj dv/dt (4) 4. i sd 22.5 a, di/dt 400 a/s, v peak < v (br)dss , v dd = 340 v . peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.83 c/w r thj-amb (1) 1. when mounted on fr-4 board of inch2, 2oz cu. thermal resistance junction-ambient max 45 c/w
electrical characteristics STL36N55M5 4/17 doc id 022602 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 550 v i dss zero gate voltage drain current (v gs = 0) v ds = 550 v v ds = 550 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 16.5 a 0.066 0.090 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 2670 75 6.6 - pf pf pf c o(er) (1) 1. c o(er) is a constant capacitance value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss equivalent output capacitance energy related v gs = 0, v ds = 0 to 440 v -71-pf c o(tr) (2) 2. c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss equivalent output capacitance time related -192-pf r g intrinsic gate resistance f = 1 mhz open drain - 1.85 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 440 v, i d = 16.5 a, v gs = 10 v (see figure 16 ) - 62 15 27 - nc nc nc
STL36N55M5 electrical characteristics doc id 022602 rev 3 5/17 table 6. switching times symbol parameter test conditions min. typ. max unit t d(v) t r(v) t f(i) t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 22 a, r g = 4.7 , v gs = 10 v (see figure 20 ) - 56 13 13 17 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd (1) i sdm (1),(2) 1. the value is rated according to r thj-case and limited by package. . 2. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 22.5 90 a a v sd (3) 3. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 22.5 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 22.5 a, di/dt = 100 a/s v dd = 100 v (see figure 17 ) - 292 4.2 29 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 22.5 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 17 ) - 364 6 33 ns c a
electrical characteristics STL36N55M5 6/17 doc id 022602 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am149 3 7v1 10 -5 10 -4 10 - 3 10 -2 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 s ingle p u l s e =0.5 zth powerflat 8 x 8 hv i d 60 50 40 0 0 10 v d s (v) 20 (a) 5 15 25 70 6v 7v v g s =9, 10v 3 0 20 10 8 v am149 3 0v1 i d 60 40 20 0 3 5 v g s (v) 7 (a) 4 6 8 70 9 10 3 0 50 v d s =25v am149 3 1v1 v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =440v i d =16.5a 50 12 3 00 200 100 0 400 450 v d s 60 70 3 50 250 150 50 v d s (v) am149 3 2v1 r d s (on) 0.061 0.059 0.057 0.055 0 20 i d (a) ( ) 10 0.06 3 v g s =10v 15 5 0.067 0.065 0.069 0.071 am149 33 v2
STL36N55M5 electrical characteristics doc id 022602 rev 3 7/17 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized b vdss vs temperature c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am149 3 4v1 e o ss 6 4 2 0 0 100 v d s (v) ( j) 400 8 200 3 00 10 500 am149 3 5v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250 a am05459v 3 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 v g s =10v i d =16.5v am05460v 3 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v 3 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.04 1.06 1.02 i d = 1ma 1.0 8 am10 3 99v1
electrical characteristics STL36N55M5 8/17 doc id 022602 rev 3 figure 14. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode e 3 00 200 100 0 0 20 r g ( ) ( j) 10 3 0 400 500 600 40 i d =22a v dd =400v eon eoff v g s =10v am149 3 6v1
STL36N55M5 test circuits doc id 022602 rev 3 9/17 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am05540v2 id vg s vd s 90 % vd s 10 % id 90 % vg s on tdel a y-off tf a ll tri s e tcro ss -over 10 % vd s 90 % id vg s (i(t)) on -off tf a ll tri s e - )) concept w a veform for ind u ctive lo a d t u rn-off
package mechanical data STL36N55M5 10/17 doc id 022602 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack is an st trademark.
STL36N55M5 package mechanical data doc id 022602 rev 3 11/17 table 8. powerflat? 8x8 hv mechanical data dim. mm min. typ. max. a 0.80 0.90 1.00 a1 0.00 0.02 0.05 b 0.95 1.00 1.05 d8.00 e8.00 d2 7.05 7.20 7.30 e2 4.15 4.30 4.40 e2.00 l 0.40 0.50 0.60 aaa 0.10 bbb 0.10 ccc 0.10
package mechanical data STL36N55M5 12/17 doc id 022602 rev 3 figure 21. powerflat? 8x8 hv drawing mechanical data index area top view plane seating 0.08 c bottom view side view pin#1 id d e b a e2 d2 l 0.40 0.20 0.008 c bbb c a b b a aaa c aaa c a1 ccc c 8 222 8 71_rev_b
STL36N55M5 package mechanical data doc id 022602 rev 3 13/17 figure 22. powerflat? 8x8 hv recommended footprint 7.30 1.05 2.00 7.70 4.40 0.60 footprint
packaging mechanical data STL36N55M5 14/17 doc id 022602 rev 3 5 packaging mechanical data figure 23. powerflat? 8x8 hv tape figure 24. powerflat? 8x8 hv package orientation in carrier tape. w (16.000. 3 ) e (1.750.1) f (7.500.1) a0 ( 8 . 3 00.1) p1 (12.000.1) p2 (2.00.1) p0 (4.00.1) d0 ( 1.550.05) d1 ( 1.5 min) t (0. 3 00.05) b0 ( 8 . 3 00.1) k0 (1.100.1) note: b as e a nd b u lk qua ntity 3 000 pc s 8 229 8 19_t a pe_reva
STL36N55M5 packaging mechanical data doc id 022602 rev 3 15/17 figure 25. powerflat? 8x8 hv reel 8 229 8 19_reel_reva
revision history STL36N55M5 16/17 doc id 022602 rev 3 6 revision history table 9. document revision history date revision changes 14-dec-2011 1 first release. 17-oct-2012 2 updated: ta bl e 5 , 6 and 7 typ. values 24-jan-2013 3 ? modified: figure 1 , 4 and 6 ? document status promoted from preliminary data to production data ? modified: v dd on ta bl e 5 ? minor text changes
STL36N55M5 doc id 022602 rev 3 17/17 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of STL36N55M5

	To Download STL36N55M5 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .